dmg1013uw q document number: ds 38559 rev. 1 - 2 1 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q p - channel enhancement mode mosfet features ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected ? totally lead - free & fully rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: sot 323 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? terminals: finish - matte tin a nnealed over alloy 42 l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.006 grams ( a pproximate) ordering information (note 5 ) part number case packaging dmg1013uw q - 7 sot323 3000 / tape & reel dmg1013uw q - 13 sot323 10 000 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. r efer to http://www.diodes.com/product_ compliance _definitions . html. 5 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information date code key year 2008 201 5 201 6 201 7 201 8 201 9 20 20 20 21 20 22 20 23 20 24 code v month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d equivalent circuit top view top view pa1 = product type marking code ym = date code marking y = year (ex: d = 20 1 6 ) m = month (ex: 9 = september) esd protected source gate protection diode gate drain g s d pa1 y m e3
dmg1013uw q document number: ds 38559 rev. 1 - 2 2 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 20 v gate - source voltage v gss 6 v continuous drain current (note 6 ) steady state t a = + 25c t a = + 85 c i d - 0.82 - 0.54 a pulsed drain current (note 7 ) i dm - 3 a thermal characteristics characteristic symbol value unit power dissipation (note 6 ) p d 0.31 w thermal resistance, junction to ambient @t a = + 25c (note 6 ) r ja j , t stg - 55 to +150 c notes: 6 . device mounted on fr - 4 pcb, with minimum recommended pad layout. 7 . repetitive rating, pulse width limited by junction temperature. electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 20 - - v v gs = 0v, i d = - 250a j = + 25c i dss - - - 100 n a v ds = - 20 v, v gs = 0v gate - source leakage i gss - - 2.0 a gs = 4.5 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) - 0.5 - - 1.0 v v ds = v gs , i d = - 250 a ds (on) - 0.5 0.7 1.0 0.7 5 1.05 1. 5 gs = - 4.5v, i d = - 430 ma v gs = - 2.5v, i d = - 300ma v gs = - 1.8v, i d = - 150ma forward transfer admittance |y fs | - 0.9 - s v ds = - 10 v, i d = - 250ma diode forward voltage v sd - 0.8 - 1.2 v v gs = 0v, i s = - 150ma dynamic characteristics (note 9 ) input capacitance c iss - 59.76 - pf v ds = - 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 12.07 - pf reverse transfer capacitance c rss - 6.36 - pf total gate charge q g - 622.4 - p c v gs = - 4.5 v, v ds = - 10 v, i d = - 250m a gate - source charge q gs - 100.3 - p c gate - drain charge q gd - 132.2 - p c turn - on delay time t d( on ) - 5.1 - ns v dd = - 10 v, v gs = - 4.5 v, r l = 47 , r g = 10 d = - 200ma turn - on rise time t r - 8.1 - ns turn - off delay time t d( off ) - 28.4 - ns turn - off fall time t f - 20.7 - ns notes: 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing.
dmg1013uw q document number: ds 38559 rev. 1 - 2 3 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = - 1.5v v gs = - 2.0v v gs = - 2.5v v gs = - 3.0v v gs = - 4.0v v gs = - 4.5v v gs = - 6.0v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5 v - 55 ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1 2 3 4 5 6 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 430ma i d = - 150ma 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs drain current and junction temperature v gs = - 4.5v - 55 ds(on) , drain - source on - resistance (normalized ) t j , junction temperature ( gs = - 2.5v, i d = - 500ma v gs = - 4.5v, i d = - 1a
dmg1013uw q document number: ds 38559 rev. 1 - 2 4 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q 0 0.3 0.6 0.9 1.2 1.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - r esistance ( j , junction temperature ( gs = - 2.5v, i d = - 500ma v gs = - 4.5v, i d = - 1a 0.4 0.6 0.8 1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs current v gs = 0v t j = - 55 o c t j = 25 o c t j = 85 o c t j = 125 o c t j = 150 o c 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 11. soa, safe operation area t j (max) =150 c =25 gs = - 4.5 v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s figure 10. typical total capacitance 1 10 100 0 5 10 15 20 fig. 9 typical total capacitance -v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c rss c oss f = 1mhz
dmg1013uw q document number: ds 38559 rev. 1 - 2 5 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 12. transient thermal resistance r ja (t)=r(t) * r ja r ja =380
dmg1013uw q document number: ds 38559 rev. 1 - 2 6 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q package outline dimensions please see ap02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. sot323 suggested pad layout please see ap02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. sot323 sot323 dim min max typ a1 0.00 0.10 0.05 a2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 d 1.80 2.20 2.15 e 2.00 2.20 2.10 e1 1.15 1.35 1.30 e 0.650 bsc e1 1.20 1.40 1.30 f 0.375 0.475 0.425 l 0.25 0.40 0.30 a 8 all dimensions in mm dimensions value (in mm) c 0.650 g 1.300 x 0.470 y 0.600 y1 2.500 a e1 e f e1 b l c e a2 a1 d y1 g y x c
dmg1013uw q document number: ds 38559 rev. 1 - 2 7 of 7 www.diodes.com january 2016 ? diodes incorporated dmg1013uw q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes. com
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